Invention Grant
- Patent Title: Plasma etching unit
- Patent Title (中): 等离子体蚀刻单元
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Application No.: US12578007Application Date: 2009-10-13
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Publication No.: US08840753B2Publication Date: 2014-09-23
- Inventor: Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
- Applicant: Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Tokyo Electron Limited,Kabushiki Kaisha Toshiba
- Current Assignee: Tokyo Electron Limited,Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Smith, Gambrell & Russell LLP
- Priority: JP2001-370898 20011205; JP2002-127051 20020426
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C23C16/50 ; C23C16/00 ; H01L21/311 ; H01L21/768 ; H01J37/32
Abstract:
The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
Public/Granted literature
- US20100024983A1 PLASMA ETCHING UNIT Public/Granted day:2010-02-04
Information query
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