Invention Grant
- Patent Title: Photolithography material for immersion lithography processes
- Patent Title (中): 用于浸没式光刻工艺的光刻材料
-
Application No.: US12913191Application Date: 2010-10-27
-
Publication No.: US08841058B2Publication Date: 2014-09-23
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/20 ; G03F7/40

Abstract:
A photolithography material is provided. The photolithography material is a surface modifying material. The photolithography material includes a polymer (e.g., fluorine polymer) that includes less than approximately 80% hydroxyl groups. In an embodiment, the photolithography material includes less than approximately 80% fluoro-alcohol functional units. Methods of using the photolithography material include as an additive to a photoresist or topcoat layer. The photolithography material may be used in an immersion lithography process.
Public/Granted literature
- US20120034558A1 PHOTOLITHOGRAPHY MATERIAL FOR IMMERSION LITHOGRAPHY PROCESSES Public/Granted day:2012-02-09
Information query
IPC分类: