Invention Grant
- Patent Title: Photoresist stripping technique
- Patent Title (中): 光阻剥离技术
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Application No.: US13942357Application Date: 2013-07-15
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Publication No.: US08841066B2Publication Date: 2014-09-23
- Inventor: Chien-Wei Wang , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/42 ; H01L21/311

Abstract:
Photoresist stripping solutions are disclosed. An exemplary solution includes an organic solvent and an organic base, wherein the organic base is represented by the formula: wherein R1—Z1, R2—Z2, R3—Z3, and R4—Z4 are steric hindered functional groups, and further wherein R1, R2, R3, and R4 are each an alkyl group and Z1, Z2, Z3, and Z4 are each a pendant group selected from the group consisting of —Cl, —Br, —I, —NO2, —SO3—, —H—, —CN, —NCO, —OCN, —CO2—, —OC(O)CR*, —SR*, —SO2N(R*)2, —SO2R*, —OC(O)R*, —C(O)R*, —Si(R*)3, and an epoxyl group.
Public/Granted literature
- US20130303421A1 PHOTORESIST STRIPPING TECHNIQUE Public/Granted day:2013-11-14
Information query
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