Invention Grant
- Patent Title: Method for producing a doped organic semiconducting layer
- Patent Title (中): 掺杂有机半导体层的制造方法
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Application No.: US12919989Application Date: 2009-02-25
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Publication No.: US08841153B2Publication Date: 2014-09-23
- Inventor: Britta Goeoetz , Thomas Dobbertin , Karsten Diekmann , Andreas Kanitz , Guenter Schmid , Arvid Hunze
- Applicant: Britta Goeoetz , Thomas Dobbertin , Karsten Diekmann , Andreas Kanitz , Guenter Schmid , Arvid Hunze
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cozen O'Connor
- Priority: DE102008011185 20080227
- International Application: PCT/DE2009/000280 WO 20090225
- International Announcement: WO2009/106068 WO 20090903
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/00

Abstract:
A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition, wherein, in process step C), the dopant complex is decomposed and the pure dopant is intercalated into the matrix material.
Public/Granted literature
- US20110124141A1 Method for Producing a Doped Organic Semiconducting Layer Public/Granted day:2011-05-26
Information query
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