Invention Grant
US08841163B2 Manufacturing method of semiconductor device comprising oxide semiconductor
有权
包括氧化物半导体的半导体器件的制造方法
- Patent Title: Manufacturing method of semiconductor device comprising oxide semiconductor
- Patent Title (中): 包括氧化物半导体的半导体器件的制造方法
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Application No.: US13399369Application Date: 2012-02-17
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Publication No.: US08841163B2Publication Date: 2014-09-23
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Hiroki Ohara
- Applicant: Shunpei Yamazaki , Junichiro Sakata , Hiroki Ohara
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-277078 20091204
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/10 ; H01L21/324 ; H01L21/28 ; H01L29/04 ; H01L29/66 ; H01L29/786
Abstract:
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Public/Granted literature
- US20120149147A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-06-14
Information query
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