Invention Grant
- Patent Title: Soldering relief method and semiconductor device employing same
- Patent Title (中): 焊接补救方法和使用其的半导体器件
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Application No.: US13890625Application Date: 2013-05-09
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Publication No.: US08841168B2Publication Date: 2014-09-23
- Inventor: Mark Wendell Schwarz , Jianwen Xu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle S. Gallardo
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/12 ; H01L21/48 ; H01L23/498 ; H01L23/00 ; H01L21/56 ; H05K3/34 ; H01L21/00
Abstract:
A semiconductor device includes a substrate having a first side and a second side, the second side having a mounting location for at least one semiconductor element, and the first side having a plurality of locations electrically connected to locations on the second side. A plurality of electrically conductive interconnects are provided at the locations, each having a first end attached at the location and a second end spaced from the substrate, and an encapsulant partially encapsulates the plurality of interconnects and has a surface lying in a first plane. The second ends are located on the side of the first plane opposite from the substrate first side, an annular space in the encapsulant surrounds each of the plurality of electrically conductive interconnects, and the annular space has a bottom located between the first plane and the substrate first side. Also a method for making such a semiconductor device.
Public/Granted literature
- US20130244384A1 SOLDERING RELIEF METHOD AND SEMICONDUCTOR DEVICE EMPLOYING SAME Public/Granted day:2013-09-19
Information query
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