Invention Grant
- Patent Title: Method of forming polysilicon layer and method of manufacturing thin film transistor using the polysilicon layer
- Patent Title (中): 多晶硅层的形成方法以及使用多晶硅层制造薄膜晶体管的方法
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Application No.: US13485684Application Date: 2012-05-31
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Publication No.: US08841194B2Publication Date: 2014-09-23
- Inventor: Jong-Ryuk Park , Yun-Mo Chung , Tak-Young Lee , Kil-Won Lee
- Applicant: Jong-Ryuk Park , Yun-Mo Chung , Tak-Young Lee , Kil-Won Lee
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2011-0128525 20111202
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/20
Abstract:
In one aspect, a method of forming a polysilicon (poly-Si) layer and a method of manufacturing a thin film transistor (TFT) using the poly-Si layer is provided. In one aspect, the method of forming a polysilicon (poly-Si) layer includes forming an amorphous silicon (a-Si) layer on a substrate in a chamber; cleaning the chamber; removing fluorine (F) generated while cleaning the chamber; forming a metal catalyst layer for crystallization, on the a-Si layer; and crystallizing the a-Si layer into a poly-Si layer by performing a thermal processing operation.
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