Invention Grant
- Patent Title: High yield substrate assembly
- Patent Title (中): 高产量基板组件
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Application No.: US13908902Application Date: 2013-06-03
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Publication No.: US08841204B2Publication Date: 2014-09-23
- Inventor: Liang Wang , Ilyas Mohammed , Masud Beroz
- Applicant: Liang Wang , Ilyas Mohammed , Masud Beroz
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30 ; H01L21/46 ; H01L23/00 ; H01L33/00 ; H01L21/683 ; H01L25/00

Abstract:
High yield substrate assembly. In accordance with a first method embodiment, a plurality of piggyback substrates are attached to a carrier substrate. The edges of the plurality of the piggyback substrates are bonded to one another. The plurality of piggyback substrates are removed from the carrier substrate to form a substrate assembly. The substrate assembly is processed to produce a plurality of integrated circuit devices on the substrate assembly. The processing may use manufacturing equipment designed to process wafers larger than individual instances of the plurality of piggyback substrates.
Public/Granted literature
- US20130288412A1 HIGH YIELD SUBSTRATE ASSEMBLY Public/Granted day:2013-10-31
Information query
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