Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure

Invention Grant

US08841220B2 Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure 有权

Title translation: 氮化镓系半导体发光元件，光源，以及形成凹凸结构的方法

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Patent Title: Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure
Patent Title (中): 氮化镓系半导体发光元件，光源，以及形成凹凸结构的方法
Application No.: US13892637

Application Date: 2013-05-13
Publication No.: US08841220B2

Publication Date: 2014-09-23
Inventor: Masaki Fujikane , Akira Inoue , Toshiya Yokogawa
Applicant: Panasonic Corporation
Applicant Address: JP Osaka
Assignee: Panasonic Corporation
Current Assignee: Panasonic Corporation
Current Assignee Address: JP Osaka
Agency: Renner, Otto, Boisselle & Sklar, LLP
Priority: JP2011-140876 20110624
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/302 ; H01L33/58 ; H01L33/32 ; H01L33/22 ; H01L33/42 ; H01L33/16

Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure

Abstract:

The light extraction surface of a nitride semiconductor light-emitting element, including a crystal plane other than a c plane, is subjected to a surface modification process to control its wettability, and then covered with a layer of fine particles. By etching that layer of fine particles after that, an unevenness structure, in which roughness curve elements have an average length (RSm) of 150 nm to 800 nm, is formed on the light extraction surface.

Abstract(Chinese):

包含除了c面以外的晶面的氮化物半导体发光元件的光提取面进行表面改性处理以控制其润湿性，然后被一层微粒覆盖。通过在此之后蚀刻该微粒子层，在光提取面上形成粗糙度曲线要素的平均长度（RSm）为150nm〜800nm的凹凸结构。

Public/Granted literature

US20130248877A1 GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT SOURCE, AND METHOD FOR FORMING UNEVENNESS STRUCTURE Public/Granted day:2013-09-26

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀