Invention Grant
US08841545B2 Solar cell wherein solar photovolatic thin film is directly formed on base
有权
太阳能电池，其中太阳光伏薄膜直接形成在基底上
- Patent Title: Solar cell wherein solar photovolatic thin film is directly formed on base
- Patent Title (中): 太阳能电池，其中太阳光伏薄膜直接形成在基底上
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Application No.: US12735692Application Date: 2009-02-10
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Publication No.: US08841545B2Publication Date: 2014-09-23
- Inventor: Yoshihide Wakayama , Kazuki Moyama , Tadahiro Ohmi , Akinobu Teramoto
- Applicant: Yoshihide Wakayama , Kazuki Moyama , Tadahiro Ohmi , Akinobu Teramoto
- Applicant Address: JP Sendai-Shi JP Tokyo
- Assignee: Tohoku University,Tokyo Electron Limited
- Current Assignee: Tohoku University,Tokyo Electron Limited
- Current Assignee Address: JP Sendai-Shi JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2008-030707 20080212
- International Application: PCT/JP2009/052197 WO 20090210
- International Announcement: WO2009/101925 WO 20090820
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/0216 ; H01L31/048
Abstract:
Disclosed is a solar cell comprising a solar cell semiconductor thin film formed on a base, a transparent conductive film formed on the semiconductor thin film, and a nitride-containing moisture diffusion-preventing film which covers the upper surface of the transparent conductive film. The moisture diffusion-preventing film is preferably composed of at least a silicon nitride film or a silicon carbide nitride (SiCN) film.
Public/Granted literature
- US20100326511A1 SOLAR CELL WHEREIN SOLAR PHOTOVOLATIC THIN FILM IS DIRECTLY FORMED ON BASE Public/Granted day:2010-12-30
Information query
IPC分类:
