Invention Grant
- Patent Title: Memory element and method for manufacturing the same, and semiconductor device
- Patent Title (中): 存储元件及其制造方法以及半导体器件
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Application No.: US11939702Application Date: 2007-11-14
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Publication No.: US08841642B2Publication Date: 2014-09-23
- Inventor: Kensuke Yoshizumi
- Applicant: Kensuke Yoshizumi
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2006-311960 20061117
- Main IPC: H01L29/72
- IPC: H01L29/72 ; G11C13/00 ; B82Y10/00 ; H01L27/112 ; H01L27/12 ; H01L27/10 ; H01L45/00

Abstract:
The memory element has a structure at least including a first conductive layer, a second conductive layer, and a memory layer disposed between the first conductive layer and the second conductive layer. The memory layer is formed by a droplet discharge method using nanoparticles of a conductive material each of which is coated with an organic thin film. Specifically, a composition in which nanoparticles of a conductive material each of which is coated with an organic thin film are dispersed in a solvent is discharged (ejected) as ink droplets, and the solvent is dried to be vaporized to form the memory layer. Accordingly, a memory element can be formed simply. In addition, efficiency in the use of materials can be improved and yield is also improved, so that the memory element can be provided at low cost.
Public/Granted literature
- US20100283024A1 Memory Element and Method for Manufacturing the Same, and Semiconductor Device Public/Granted day:2010-11-11
Information query
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