Invention Grant
- Patent Title: Self aligned carbide source/drain FET
- Patent Title (中): 自对准碳化物源极/漏极FET
-
Application No.: US12627120Application Date: 2009-11-30
-
Publication No.: US08841652B2Publication Date: 2014-09-23
- Inventor: Cyril Cabral, Jr. , Josephine B. Chang , Alfred Grill , Michael A. Guillorn , Christian Lavoie , Eugene J. O'Sullivan
- Applicant: Cyril Cabral, Jr. , Josephine B. Chang , Alfred Grill , Michael A. Guillorn , Christian Lavoie , Eugene J. O'Sullivan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/16 ; H01L29/775 ; B82Y10/00 ; H01L51/10 ; H01L51/00 ; H01L51/05
Abstract:
A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed on over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.
Public/Granted literature
- US20110127493A1 SELF ALIGNED CARBIDE SOURCE/DRAIN FET Public/Granted day:2011-06-02
Information query
IPC分类:
