Invention Grant
- Patent Title: Thin film transistor array panel and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列面板及其制造方法
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Application No.: US13040245Application Date: 2011-03-03
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Publication No.: US08841677B2Publication Date: 2014-09-23
- Inventor: Sun-Kyo Jung
- Applicant: Sun-Kyo Jung
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Christie, Parker & Hale, LLP
- Priority: KR10-2010-0077979 20100812
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/12

Abstract:
A thin film transistor array panel includes: a gate line and a storage electrode on a substrate and separated from each other; a gate insulating layer covering the gate line and the storage electrode; a data line crossing the gate line and being on the gate insulating layer; a thin film transistor formed at a crossing region of the gate line and the data line, and including a gate electrode, a source electrode, and a drain electrode; a passivation layer exposing a portion of the drain electrode and formed on the thin film transistor and the data line; and a pixel electrode contacting the drain electrode and overlapping the storage electrode with the gate insulating layer interposed therebetween.
Public/Granted literature
- US20120037909A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-02-16
Information query
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