A semiconductor device includes an IGBT forming region and a diode forming region. The IGBT forming region includes an IGBT operating section that operates as an IGBT and a thinned-out section that does not operate as an IGBT. The IGBT operating section includes a channel region, and the thinned-out section includes a first anode region. The diode forming region includes a second anode region. When an area density is defined as a value calculated by integrating a concentration profile of second conductivity type impurities in each of the channel region, the first anode region, and the second anode region in a depth direction, an area density of the channel region is higher than an area density of the first anode region and an area density of the second anode region.