Invention Grant
- Patent Title: Nano-pillar transistor fabrication and use
- Patent Title (中): 纳米柱晶体管的制造和使用
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Application No.: US13852480Application Date: 2013-03-28
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Publication No.: US08841712B2Publication Date: 2014-09-23
- Inventor: Aditya Rajagopal , Axel Scherer , Michael D. Henry , Sameer Walavalkar , Thomas A. Tombrello , Andrew P. Homyk
- Applicant: California Institute of Technology
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Steinfl & Bruno, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; G01N27/327 ; H01L29/66 ; H01L29/78

Abstract:
A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.
Public/Granted literature
- US20140070286A1 NANO-PILLAR TRANSISTOR FABRICATION AND USE Public/Granted day:2014-03-13
Information query
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