Invention Grant
- Patent Title: Semiconductor device and method of forming the same
- Patent Title (中): 半导体器件及其形成方法
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Application No.: US13465548Application Date: 2012-05-07
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Publication No.: US08841722B2Publication Date: 2014-09-23
- Inventor: Masayoshi Sammi
- Applicant: Masayoshi Sammi
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.A.R.L.
- Current Assignee: PS4 Luxco S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: Young & Thompson
- Priority: JP2011-105186 20110510
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/108 ; H01L49/02 ; H01L21/8234
Abstract:
A semiconductor device includes a semiconductor substrate having a first groove. The first groove has a bottom and first and second side surfaces opposite to each other. A first gate insulator extends alongside the first side surface. A first gate electrode is formed in the first groove and on the first gate insulator. A second gate insulator extends alongside the second side surface. A second gate electrode is formed in the first groove and on the second gate insulator. The second gate electrode is separate from the first gate electrode.
Public/Granted literature
- US20120286358A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2012-11-15
Information query
IPC分类:
