Invention Grant
US08841743B2 Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
有权
固态图像拾取装置，使用这种固态图像拾取装置的电子装置和制造固态图像拾取装置的方法
- Patent Title: Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
- Patent Title (中): 固态图像拾取装置，使用这种固态图像拾取装置的电子装置和制造固态图像拾取装置的方法
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Application No.: US12929985Application Date: 2011-03-01
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Publication No.: US08841743B2Publication Date: 2014-09-23
- Inventor: Shin Iwabuchi , Kazuhide Yokota , Takeshi Yanagita , Yasushi Maruyama
- Applicant: Shin Iwabuchi , Kazuhide Yokota , Takeshi Yanagita , Yasushi Maruyama
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2005-062714 20050307; JP2005-163267 20050602; JP2006-012106 20060120
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L27/146
Abstract:
A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.
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