A magnetic random access memory apparatus includes a memory cell array including a plurality of magnetic memory cells; a reference cell array including a pair of reference magnetic memory cells; a write driver configured to program data in the memory cell array and the reference cell array; and a first switching unit configured to form a current path which extends from a bit line connected to the write driver via the reference cell array including the pair of reference magnetic memory cells to a source line connected to the write driver or a current path which extends from a source line connected to the write driver via the reference cell array including the pair of reference magnetic memory cells to a bit line connected to the write driver.