Invention Grant
US08842478B2 Nonvolatile semiconductor memory device 有权
非易失性半导体存储器件

Nonvolatile semiconductor memory device
Abstract:
According to one embodiment, in a write control unit that performs writing on a selected memory cell connected to a selected word line by making to apply a program voltage to the selected word line while making to apply an intermediate voltage to unselected word lines, an isolation voltage is controlled to be applied to any word line of the unselected word lines at a time of applying the program voltage and the isolation voltage is controlled to increase before the intermediate voltage is removed after applying the program voltage.
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