Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13616718Application Date: 2012-09-14
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Publication No.: US08842478B2Publication Date: 2014-09-23
- Inventor: Koji Kato
- Applicant: Koji Kato
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-002388 20120110
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/12

Abstract:
According to one embodiment, in a write control unit that performs writing on a selected memory cell connected to a selected word line by making to apply a program voltage to the selected word line while making to apply an intermediate voltage to unselected word lines, an isolation voltage is controlled to be applied to any word line of the unselected word lines at a time of applying the program voltage and the isolation voltage is controlled to increase before the intermediate voltage is removed after applying the program voltage.
Public/Granted literature
- US20130242660A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-09-19
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