Invention Grant
US08842491B2 Decoding scheme for bipolar-based diode three-dimensional memory requiring unipolar programming
有权
需要单极编程的双极型二极管三维存储器的解码方案
- Patent Title: Decoding scheme for bipolar-based diode three-dimensional memory requiring unipolar programming
- Patent Title (中): 需要单极编程的双极型二极管三维存储器的解码方案
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Application No.: US13551597Application Date: 2012-07-17
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Publication No.: US08842491B2Publication Date: 2014-09-23
- Inventor: Kailash Gopalakrishnan , Chung H. Lam , Jing Li , Robert K. Montoye
- Applicant: Kailash Gopalakrishnan , Chung H. Lam , Jing Li , Robert K. Montoye
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Vazken Alexanian
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A system and method for operating a unipolar memory cell array including a bidirectional access diode. The system includes a column voltage switch electrically coupled to a plurality of column voltages. The column voltage switch includes an output electrically coupled to the bidirectional access diode. The plurality of column voltages includes at least one select column voltage and one deselect column voltage. The system includes a row voltage switch electrically coupled to a plurality of row voltages. The row voltage switch includes an output electrically coupled to the bidirectional access diode. The plurality of row voltages includes at least one select row voltage and one deselect row voltage. The system includes a column and row decoder electrically coupled to a select line of the column and row voltage switches, respectively.
Public/Granted literature
- US20140022850A1 DECODING SCHEME FOR BIPOLAR-BASED DIODE THREE-DIMENSIONAL MEMORY REQUIRING UNIPOLAR PROGRAMMING Public/Granted day:2014-01-23
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