Invention Grant
US08843695B2 Reversible write-protection for non-volatile semiconductor memory device
有权
用于非易失性半导体存储器件的可逆写保护
- Patent Title: Reversible write-protection for non-volatile semiconductor memory device
- Patent Title (中): 用于非易失性半导体存储器件的可逆写保护
-
Application No.: US13310735Application Date: 2011-12-03
-
Publication No.: US08843695B2Publication Date: 2014-09-23
- Inventor: Dan Shao , Qingshan Hao , Hongru Xu
- Applicant: Dan Shao , Qingshan Hao , Hongru Xu
- Applicant Address: CN Shanghai
- Assignee: Giantec Semiconductor Ltd. Inc.
- Current Assignee: Giantec Semiconductor Ltd. Inc.
- Current Assignee Address: CN Shanghai
- Agent Yuan Qing Jiang
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C16/22 ; G06F12/14

Abstract:
A serial memory device having a non-volatile memory array including a plurality of memory blocks, one or more said plurality of blocks being capable of being placed in a locked or an unlocked state upon receiving designated lock or unlock signal sequences is provided. The unlock signal sequences comprises at least two sequential signal sequences: a first unlock sequence, which has 1 to 7 signal bits, is applied to one of address input pins or a logic low enabled write-protection input pin and a second unlock sequence follows the first unlock signal sequence and is applied to a serial data access pin. The memory device further comprising a control logic circuit block coupled to a write-protection circuit block to provide means to identify the designated lock and unlock signal sequences and to set a protection state in a security area.
Public/Granted literature
- US20130117499A1 REVERSIBLE WRITE-PROTECTION FOR NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-05-09
Information query