Invention Grant
US08843699B2 Flash memory device with multi-level cells and method of writing data therein
有权
具有多级单元的闪存设备及其中写入数据的方法
- Patent Title: Flash memory device with multi-level cells and method of writing data therein
- Patent Title (中): 具有多级单元的闪存设备及其中写入数据的方法
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Application No.: US13777816Application Date: 2013-02-26
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Publication No.: US08843699B2Publication Date: 2014-09-23
- Inventor: Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
- Applicant: Won-Moon Cheon , Seon-Taek Kim , Chan-Ik Park , Sung-up Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0105692 20061030
- Main IPC: G06F12/06
- IPC: G06F12/06 ; G11C16/04 ; G06F12/02
Abstract:
In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
Public/Granted literature
- US20130173857A1 FLASH MEMORY DEVICE WITH MULTI-LEVEL CELLS AND METHOD OF WRITING DATA THEREIN Public/Granted day:2013-07-04
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