Invention Grant
- Patent Title: Substrate processing apparatus and substrate processing method
- Patent Title (中): 基板加工装置及基板处理方法
-
Application No.: US12042661Application Date: 2008-03-05
-
Publication No.: US08845853B2Publication Date: 2014-09-30
- Inventor: Jun Yamawaku , Tsuyoshi Moriya
- Applicant: Jun Yamawaku , Tsuyoshi Moriya
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-079165 20070326
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J37/32 ; H01L21/67 ; H01L21/683
Abstract:
A substrate processing apparatus that can improve the uniformity of plasma processing carried out on a wafer. The wafer is housed in a chamber of the substrate processing apparatus and subjected to plasma processing using plasma produced in the processing chamber. A temperature control mechanism jets a high-temperature gas toward at least part of an annular focus ring facing the plasma.
Public/Granted literature
- US20080237182A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Public/Granted day:2008-10-02
Information query
IPC分类:
