Invention Grant
US08845932B2 Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
有权
含有铋 - 氧化碲的厚膜糊剂及其在制造半导体器件中的应用
- Patent Title: Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
- Patent Title (中): 含有铋 - 氧化碲的厚膜糊剂及其在制造半导体器件中的应用
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Application No.: US13438124Application Date: 2012-04-26
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Publication No.: US08845932B2Publication Date: 2014-09-30
- Inventor: Kenneth Warren Hang , Yueli Wang
- Applicant: Kenneth Warren Hang , Yueli Wang
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01B1/02
- IPC: H01B1/02
Abstract:
The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a Pb-free bismuth-tellurium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.
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