Invention Grant
- Patent Title: Low-resistance electrode design
- Patent Title (中): 低电阻电极设计
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Application No.: US13458213Application Date: 2012-04-27
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Publication No.: US08846473B2Publication Date: 2014-09-30
- Inventor: Grigory Simin , Michael Shur , Remigijus Gaska
- Applicant: Grigory Simin , Michael Shur , Remigijus Gaska
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/417 ; G06F17/50 ; H01L23/482

Abstract:
A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.
Public/Granted literature
- US20120216161A1 Low-Resistance Electrode Design Public/Granted day:2012-08-23
Information query
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