The present invention generally relates to methods of forming substrates using remote radical hydride doping. The methods generally include remotely activating a gas and introducing activated radicals of the gas into a chamber. The activated radicals may be activated hydride radicals of a gas such as diborane (B2H6), phosphine (PH3), or arsine (AsH3) which are utilized to incorporate an element such as boron, phosphorus, or arsenic into a substrate having a surface temperature between about 400 degrees Celsius and about 1000 degrees Celsius. Alternatively, the activated radicals may be activated radicals of an inert gas. The activated radicals of the inert gas are introduced into a chamber having a dopant-containing gas, such as diborane, phosphine, or arsine, therein. The activated radicals of the inert gas activate the dopant-gas and incorporate dopants into a heated substrate located within the chamber.