Process of forming through-silicon via structure

Invention Grant

US08846523B2 Process of forming through-silicon via structure 有权

Title translation: 形成通硅结构的工艺

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Patent Title: Process of forming through-silicon via structure
Patent Title (中): 形成通硅结构的工艺
Application No.: US13854230

Application Date: 2013-04-01
Publication No.: US08846523B2

Publication Date: 2014-09-30
Inventor: Weng-Jin Wu , Yung-Chi Lin , Wen-Chih Chiou
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW
Agency: Lowe Hauptman & Ham, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Process of forming through-silicon via structure

Abstract:

In a process, an opening is formed to extend from a front surface of a semiconductor substrate through at least a part of the semiconductor substrate. A metal seed layer is formed on a sidewall of the opening. A metal silicide layer is formed on at least one portion of the metal seed layer. A metal layer is formed on the metal silicide layer and the metal seed layer to fill the opening.

Abstract(Chinese):

在一个过程中，形成从半导体衬底的前表面延伸穿过半导体衬底的至少一部分的开口。金属种子层形成在开口的侧壁上。在金属种子层的至少一部分上形成金属硅化物层。在金属硅化物层和金属种子层上形成金属层以填充开口。

Public/Granted literature

US20130224909A1 PROCESS OF FORMING THROUGH-SILICON VIA STRUCTURE Public/Granted day:2013-08-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）