Invention Grant
US08847141B2 Photoelectric conversion element, production method thereof, photosensor, imaging device and their driving method
有权
光电转换元件,其制造方法,光传感器,成像装置及其驱动方法
- Patent Title: Photoelectric conversion element, production method thereof, photosensor, imaging device and their driving method
- Patent Title (中): 光电转换元件,其制造方法,光传感器,成像装置及其驱动方法
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Application No.: US13376089Application Date: 2010-06-03
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Publication No.: US08847141B2Publication Date: 2014-09-30
- Inventor: Eiji Fukuzaki , Kimiatsu Nomura
- Applicant: Eiji Fukuzaki , Kimiatsu Nomura
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-134017 20090603; JP2010-017477 20100128; JP2010-084412 20100331
- International Application: PCT/JP2010/059409 WO 20100603
- International Announcement: WO2010/140645 WO 20101209
- Main IPC: H01L51/46
- IPC: H01L51/46 ; H01L27/146 ; H01L51/00 ; B82Y10/00 ; H01L51/42

Abstract:
To provide a photoelectric conversion element capable of functioning as a photoelectric conversion element when a compound having a specific structure is applied to the photoelectric conversion element, causing the element to exhibit a low dark current, and reducing the range of increase in the dark current even when the element is heat-treated, and an imaging device equipped with such a photoelectric conversion element. A photoelectric conversion element having a photoelectric conversion film which is sandwiched between a transparent electrically conductive film and an electrically conductive film and contains a photoelectric conversion layer and an electron blocking layer, wherein the electron blocking layer contains a compound having, as a substituent, a substituted amino group containing three or more ring structures.
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