Invention Grant
- Patent Title: Large-scale X-ray detectors and methods of manufacturing the same
- Patent Title (中): 大型X射线探测器及其制造方法
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Application No.: US12929203Application Date: 2011-01-07
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Publication No.: US08847168B2Publication Date: 2014-09-30
- Inventor: Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
- Applicant: Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0058624 20100621
- Main IPC: G01T1/24
- IPC: G01T1/24 ; H01L31/08 ; H01L27/146

Abstract:
Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.
Public/Granted literature
- US20110309259A1 Large-scale X-ray detectors and methods of manufacturing the same Public/Granted day:2011-12-22
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