Invention Grant
- Patent Title: Resistive switching devices having alloyed electrodes and methods of formation thereof
- Patent Title (中): 具有合金电极的电阻式开关器件及其形成方法
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Application No.: US13558296Application Date: 2012-07-25
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Publication No.: US08847192B2Publication Date: 2014-09-30
- Inventor: Wei Ti Lee , Chakravarthy Gopalan , Yi Ma , Jeffrey Shields , Philippe Blanchard , John Ross Jameson , Foroozan Sarah Koushan , Janet Wang , Mark Kellam
- Applicant: Wei Ti Lee , Chakravarthy Gopalan , Yi Ma , Jeffrey Shields , Philippe Blanchard , John Ross Jameson , Foroozan Sarah Koushan , Janet Wang , Mark Kellam
- Applicant Address: FR Paris US CA Sunnyvale
- Assignee: Adesto Technologies France SARL,Adesto Technologies Corporation
- Current Assignee: Adesto Technologies France SARL,Adesto Technologies Corporation
- Current Assignee Address: FR Paris US CA Sunnyvale
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00
Abstract:
In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.
Public/Granted literature
- US20130062587A1 Resistive Switching Devices Having Alloyed Electrodes And Methods of Formation Thereof Public/Granted day:2013-03-14
Information query
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