Invention Grant
- Patent Title: Semiconductor device test structures and methods
- Patent Title (中): 半导体器件测试结构和方法
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Application No.: US12914539Application Date: 2010-10-28
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Publication No.: US08847222B2Publication Date: 2014-09-30
- Inventor: Wolfgang Walter
- Applicant: Wolfgang Walter
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/10 ; H01L21/66 ; G01R31/26 ; G01R31/28

Abstract:
Semiconductor device test structures and methods are disclosed. In a preferred embodiment, a test structure includes a feed line, a stress line disposed proximate the feed line, and a conductive feature disposed between the stress line and the feed line. The test structure includes a temperature adjuster proximate at least the conductive feature, and at least one feedback device coupled to the temperature adjuster and at least the conductive feature.
Public/Granted literature
- US20110042671A1 Semiconductor Device Test Structures and Methods Public/Granted day:2011-02-24
Information query
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