Invention Grant
- Patent Title: Transistor including reduced channel length
- Patent Title (中): 晶体管包括通道长度减小
-
Application No.: US12986197Application Date: 2011-01-07
-
Publication No.: US08847232B2Publication Date: 2014-09-30
- Inventor: Lee W. Tutt , Shelby F. Nelson
- Applicant: Lee W. Tutt , Shelby F. Nelson
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent William R. Zimmerli
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/00 ; H01L29/786

Abstract:
A transistor includes a substrate. A first electrically conductive material layer, having a thickness, is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer overhangs the first electrically conductive material layer. An electrically insulating material layer, having a thickness, is conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate. The thickness of the first electrically conductive material layer is greater than the thickness of the electrically insulating material layer.
Public/Granted literature
- US20120175684A1 TRANSISTOR INCLUDING REDUCED CHANNEL LENGTH Public/Granted day:2012-07-12
Information query
IPC分类: