Invention Grant
- Patent Title: Sapphire substrate having triangular projections with bottom sides formed of outwardly curved lines
- Patent Title (中): 蓝宝石衬底具有三角形突起，底面由外侧曲线形成
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Application No.: US13831138Application Date: 2013-03-14
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Publication No.: US08847262B2Publication Date: 2014-09-30
- Inventor: Junya Narita , Takuya Okada , Yohei Wakai , Yoshiki Inoue , Naoya Sako , Katsuyoshi Kadan
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Foley & Lardner LLP
- Priority: JP2010-177007 20100806
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L33/00 ; H01L33/20 ; H01L33/10 ; H01L33/32
Abstract:
A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.
Public/Granted literature
- US20130285109A1 SAPPHIRE SUBSTRATE AND SEMICONDUCTOR Public/Granted day:2013-10-31
Information query
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