Invention Grant
- Patent Title: Semiconductor device and fabrication method
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Application No.: US14166432Application Date: 2014-01-28
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Publication No.: US08847282B2Publication Date: 2014-09-30
- Inventor: Masaki Haneda , Yuka Kase , Masanori Terahara , Takayuki Aoyama
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-084093 20110405; JP2012-000836 20120105
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L29/78 ; H01L29/06
Abstract:
A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.
Public/Granted literature
- US20140138769A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD Public/Granted day:2014-05-22
Information query
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