Invention Grant
US08847294B2 Substrate including oxide thin film transistor, method for fabricating the same, and driving circuit for liquid crystal display device using the same
有权
包括氧化物薄膜晶体管的基板，及其制造方法以及使用其的液晶显示装置的驱动电路
- Patent Title: Substrate including oxide thin film transistor, method for fabricating the same, and driving circuit for liquid crystal display device using the same
- Patent Title (中): 包括氧化物薄膜晶体管的基板，及其制造方法以及使用其的液晶显示装置的驱动电路
-
Application No.: US13728757Application Date: 2012-12-27
-
Publication No.: US08847294B2Publication Date: 2014-09-30
- Inventor: TaeSang Kim , Hun Jeoung
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2012-0096532 20120831
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/786 ; H01L29/66
Abstract:
There are provided a substrate including an oxide TFT having improved initial threshold voltage degradation characteristics included in a driving circuit of a liquid crystal display (LCD) device, a method for fabricating the same, and a driving circuit for an LCD device using the same. The substrate including an oxide thin film transistor (TFT) includes: a base substrate divided into a pixel region and a driving circuit region; and a plurality of TFTs formed on the base substrate, wherein an initial threshold voltage of at least one of the plurality of TFTs formed in the driving circuit region is positive-shifted to have a predetermined level.
Public/Granted literature
Information query
IPC分类:
