Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US13984067Application Date: 2012-02-21
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Publication No.: US08847301B2Publication Date: 2014-09-30
- Inventor: Takayuki Onda
- Applicant: Takayuki Onda
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-066604 20110324
- International Application: PCT/JP2012/001164 WO 20120221
- International Announcement: WO2012/127781 WO 20120927
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L21/8239 ; H01L27/115 ; H01L29/78 ; H01L21/28
Abstract:
A first connection portion and a second connection portion connect a first control gate to a second control gate, and are separated from each other. The first control gate includes a first disconnection portion between the first connection portion and a source diffusion layer closest to the first connection portion. The second control gate includes a second disconnection portion between the second connection portion and the source diffusion layer closest to the second connection portion. A first word gate and a second word gate are not disconnected in portions overlapping the first disconnection portion and the second disconnection portion.
Public/Granted literature
- US20130313624A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-11-28
Information query
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