Invention Grant
- Patent Title: Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus
- Patent Title (中): 制造半导体器件，半导体器件和衬底处理设备的方法
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Application No.: US13293636Application Date: 2011-11-10
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Publication No.: US08847343B2Publication Date: 2014-09-30
- Inventor: Norikazu Mizuno , Tomohide Kato , Takaaki Noda
- Applicant: Norikazu Mizuno , Tomohide Kato , Takaaki Noda
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2010-261571 20101124
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/0216 ; H01L27/146 ; C23C16/52 ; C23C16/455 ; C23C16/40
Abstract:
An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.
Public/Granted literature
- US20120126355A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2012-05-24
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