Invention Grant
- Patent Title: High voltage semiconductor element and operating method thereof
- Patent Title (中): 高压半导体元件及其工作方法
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Application No.: US13401652Application Date: 2012-02-21
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Publication No.: US08848325B2Publication Date: 2014-09-30
- Inventor: Hsin-Liang Chen , Wen-Ching Tung
- Applicant: Hsin-Liang Chen , Wen-Ching Tung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H03K17/06
- IPC: H03K17/06
Abstract:
A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source.
Public/Granted literature
- US20130214821A1 HIGH VOLTAGE SEMICONDUCTOR ELEMENT AND OPERATING METHOD THEREOF Public/Granted day:2013-08-22
Information query
