Invention Grant
- Patent Title: Power gating of cores by an SoC
- Patent Title (中): SoC的核心电源门控
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Application No.: US13163335Application Date: 2011-06-17
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Publication No.: US08850236B2Publication Date: 2014-09-30
- Inventor: Rudrajit Sengupta
- Applicant: Rudrajit Sengupta
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: IN1712/CHE/2010 20100618; KR10-2010-0088528 20100909
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F1/32

Abstract:
A method for power gating a core by a SoC is provided. Instruction Pointer information, state of the core, core access information and wake up latency information of the core are used in power gating or un-gating of the core. A change in state of the core is detected by a device driver and is provided to a power management unit. As the state of the core changes from active to passive, the wake up latency information and the core access information of the core are retrieved by the SoC from a database to perform either the power gating or the un-gating of the core. The database is prepared by analyzing code blocks statically.
Public/Granted literature
- US20110314314A1 POWER GATING OF CORES BY AN SOC Public/Granted day:2011-12-22
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