Invention Grant
- Patent Title: Power semiconductor device for igniter
- Patent Title (中): 点火器功率半导体装置
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Application No.: US12877538Application Date: 2010-09-08
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Publication No.: US08861175B2Publication Date: 2014-10-14
- Inventor: Shinsuke Godo , Kazuhiro Nishimura , Kazuki Yamada
- Applicant: Shinsuke Godo , Kazuhiro Nishimura , Kazuki Yamada
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-284099 20091215
- Main IPC: F23Q3/00
- IPC: F23Q3/00

Abstract:
A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current; and an integrated circuit driving and controlling the semiconductor switching device, wherein the integrated circuit includes: a first discharge device discharging charge accumulated on a control terminal of the semiconductor switching device and shutting off the semiconductor switching device so as to generate ignition plug spark voltage on a secondary side of the ignition coil during a normal operation; and a second discharge device slower discharging the charge accumulated on the control terminal in comparison with the first discharge device and shutting off the semiconductor switching device so that a voltage on the second side of the ignition coil is equal to or lower than the ignition plug spark voltage during an abnormal state.
Public/Granted literature
- US20110141651A1 POWER SEMICONDUCTOR DEVICE FOR IGNITER Public/Granted day:2011-06-16
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