Invention Grant
US08861244B2 Non-volatile memory cell with multiple resistive sense elements sharing a common switching device
有权
具有多个电阻感测元件的非易失性存储单元共享公共的开关器件
- Patent Title: Non-volatile memory cell with multiple resistive sense elements sharing a common switching device
- Patent Title (中): 具有多个电阻感测元件的非易失性存储单元共享公共的开关器件
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Application No.: US13037955Application Date: 2011-03-01
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Publication No.: US08861244B2Publication Date: 2014-10-14
- Inventor: Andrew John Carter , Maroun Georges Khoury , Yong Lu , Roger Glenn Rolbiecki
- Applicant: Andrew John Carter , Maroun Georges Khoury , Yong Lu , Roger Glenn Rolbiecki
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C11/16

Abstract:
A non-volatile memory cell array and associated method of use. In accordance with various embodiments, the array includes a plurality of programmable resistive sense elements (RSEs) coupled to a shared switching device. The switching device has a common source region and multiple drain regions, each drain region connected to an associated RSE from said plurality of RSEs.
Public/Granted literature
- US20110149639A1 Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sharing a Common Switching Device Public/Granted day:2011-06-23
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