Invention Grant
- Patent Title: Multi-valued logic device having nonvolatile memory device
- Patent Title (中): 具有非易失性存储器件的多值逻辑器件
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Application No.: US13564878Application Date: 2012-08-02
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Publication No.: US08861268B2Publication Date: 2014-10-14
- Inventor: Ho-jung Kim , Joong-ho Choi , Jai-kwang Shin , Hyun-sik Choi
- Applicant: Ho-jung Kim , Joong-ho Choi , Jai-kwang Shin , Hyun-sik Choi
- Applicant Address: KR Gyeonggi-Do KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,University of Seoul Foundation of Industry Academic Cooperation
- Current Assignee: Samsung Electronics Co., Ltd.,University of Seoul Foundation of Industry Academic Cooperation
- Current Assignee Address: KR Gyeonggi-Do KR Seoul
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0119776 20111116
- Main IPC: G11C16/12
- IPC: G11C16/12 ; G11C16/30 ; G11C11/56 ; G11C16/10 ; G11C16/34

Abstract:
A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal.
Public/Granted literature
- US20130121059A1 MULTI-VALUED LOGIC DEVICE HAVING NONVOLATILE MEMORY DEVICE Public/Granted day:2013-05-16
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