Invention Grant
- Patent Title: Semiconductor storage device and method of throttling performance of the same
- Patent Title (中): 半导体存储装置及其节流方法的性能相同
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Application No.: US13166257Application Date: 2011-06-22
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Publication No.: US08862807B2Publication Date: 2014-10-14
- Inventor: Han Bin Yoon , Yeong-Jae Woo , Dong Gi Lee , Young Kug Moon , Hyuck-Sun Kwon
- Applicant: Han Bin Yoon , Yeong-Jae Woo , Dong Gi Lee , Young Kug Moon , Hyuck-Sun Kwon
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Priority: KR10-2010-0080697 20100820; KR10-2010-0080698 20100820; KR10-2010-0080699 20100820
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
A semiconductor storage device (SSD) and a method of throttling performance of the SSD are provided. The method can include includes gathering at least two workload data items related with to a workload of the semiconductor storage device, estimating the workload using the at least two workload data items, and throttling the performance of the semiconductor storage device according to the estimated workload. Accordingly, a workload that the semiconductor storage device will undergo can be estimated.
Public/Granted literature
- US20120047319A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF THROTTLING PERFORMANCE OF THE SAME Public/Granted day:2012-02-23
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