Invention Grant
- Patent Title: Reading/writing control method and system for nonvolatile memory storage device
- Patent Title (中): 非易失性存储器的读/写控制方法和系统
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Application No.: US13320847Application Date: 2010-07-19
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Publication No.: US08862855B2Publication Date: 2014-10-14
- Inventor: Zhixiong Li , Enhua Deng , Dan Guo
- Applicant: Zhixiong Li , Enhua Deng , Dan Guo
- Applicant Address: CN Guangdong
- Assignee: Shenzhen Netcom Electronics Co., Ltd.
- Current Assignee: Shenzhen Netcom Electronics Co., Ltd.
- Current Assignee Address: CN Guangdong
- Agency: Rosenberg, Klein & Lee
- Priority: CN200910110589 20091023
- International Application: PCT/CN2010/075233 WO 20100719
- International Announcement: WO2011/047563 WO 20110428
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02

Abstract:
The present invention is adapted to data storage technology field, and provides a reading/writing control method and system for nonvolatile memory, the method including the following steps: dividing valid blocks in the nonvolatile memory into different zones, the zones including at least one data zone having fixed number of valid blocks and one exchange zone having at least two valid blocks; creating a mapping table of logic blocks and physical blocks in each zone; establishing a mapping table of logic pages and physical pages in the blocks based on redundant area information of pages in the blocks, and storing the mapping table of the logic blocks and physical blocks in each zone and the mapping table of logic pages and physical pages in each block in a private data area; and writing data segments in an idle page of the blocks of the data zones in sequence, or reading data segments from valid pages in the data zones, thus the data reading/writing speed and efficiency is promoted.
Public/Granted literature
- US20120066443A1 READING/WRITING CONTROL METHOD AND SYSTEM FOR NONVOLATILE MEMORY STORAGE DEVICE Public/Granted day:2012-03-15
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