Invention Grant
- Patent Title: Substrate treatment apparatus and substrate treatment method
- Patent Title (中): 基板处理装置及基板处理方法
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Application No.: US12908698Application Date: 2010-10-20
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Publication No.: US08864933B2Publication Date: 2014-10-21
- Inventor: Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
- Applicant: Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-338114 20051124; JP2006-183981 20060704
- Main IPC: C23F1/08
- IPC: C23F1/08 ; H01L21/316 ; H01L21/3105 ; H01L21/311 ; H01L21/67
Abstract:
In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
Public/Granted literature
- US20110030897A1 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD Public/Granted day:2011-02-10
Information query
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