Invention Grant
- Patent Title: Imprinting of partial fields at the edge of the wafer
- Patent Title (中): 在晶片边缘印刷局部场
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Application No.: US13098959Application Date: 2011-05-02
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Publication No.: US08865046B2Publication Date: 2014-10-21
- Inventor: Sidlgata V. Sreenivasan , Byung-Jin Choi
- Applicant: Sidlgata V. Sreenivasan , Byung-Jin Choi
- Applicant Address: US TX Austin
- Assignee: Canon Nanotechnologies, Inc.
- Current Assignee: Canon Nanotechnologies, Inc.
- Current Assignee Address: US TX Austin
- Agent Cameron A. King
- Main IPC: B29C43/58
- IPC: B29C43/58 ; B29C59/00 ; B82Y40/00 ; G03F7/00 ; B29C43/00 ; B82Y10/00 ; B29C43/02
Abstract:
Edge field patterning of a substrate having full fields and partial fields may include patterning using a template having multiple mesas with each mesa corresponding to a field on the substrate. Polymerizable material may be deposited solely between the template and the full fields of the substrate. A non-reactive material may be deposited between the template and partial fields of the substrate.
Public/Granted literature
- US20110212263A1 Imprinting of Partial Fields at the Edge of the Wafer Public/Granted day:2011-09-01
Information query
