Invention Grant
- Patent Title: Chips with high fracture toughness through a metal ring
- Patent Title (中): 通过金属环具有高断裂韧性的芯片
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Application No.: US14146080Application Date: 2014-01-02
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Publication No.: US08865570B2Publication Date: 2014-10-21
- Inventor: Ilyas Mohammed
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66

Abstract:
A method of making an edge-reinforced microelectronic element is disclosed. The steps include mechanically cutting along dicing lanes of a substrate at least partially through a thickness thereof to form a plurality of edge surfaces extending away from a front surface thereof and forming a continuous monolithic metallic edge-reinforcement ring that covers each of the plurality of edge surfaces and extends onto the front surface. The front surface may have a plurality of contacts thereat and the substrate may embody a plurality of microelectronic elements.
Public/Granted literature
- US20140141597A1 CHIPS WITH HIGH FRACTURE TOUGHNESS THROUGH A METAL RING Public/Granted day:2014-05-22
Information query
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