Pattern forming method, semiconductor device manufacturing method, and coating apparatus

Invention Grant

US08865580B2 Pattern forming method, semiconductor device manufacturing method, and coating apparatus 有权

Title translation: 图案形成方法，半导体器件制造方法和涂布装置

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Patent Title: Pattern forming method, semiconductor device manufacturing method, and coating apparatus
Patent Title (中): 图案形成方法，半导体器件制造方法和涂布装置
Application No.: US13603902

Application Date: 2012-09-05
Publication No.: US08865580B2

Publication Date: 2014-10-21
Inventor: Katsutoshi Kobayashi , Daisuke Kawamura
Applicant: Katsutoshi Kobayashi , Daisuke Kawamura
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
Priority: JP2012-036375 20120222
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/4763

Pattern forming method, semiconductor device manufacturing method, and coating apparatus

Abstract:

According to one embodiment, a pattern forming method is disclosed. A resist pattern having a top surface is formed pattern on a substrate. A coating film having a first thickness distribution is formed on the substrate. The coating film covers the resist pattern. The coating film is thinned to expose the top surface of the resist pattern. The first thickness distribution is changed into a second thickness distribution which is more uniform than the first thickness distribution. The resist pattern is removed without removing the coating film. A pattern is formed in the substrate by processing the substrate by using the coating film as a mask.

Abstract(Chinese):

根据一个实施例，公开了一种图案形成方法。在基板上形成具有顶面的抗蚀剂图案。在基板上形成具有第一厚度分布的涂膜。涂膜覆盖抗蚀剂图案。使涂膜变薄以暴露抗蚀剂图案的顶表面。第一厚度分布变为比第一厚度分布更均匀的第二厚度分布。去除抗蚀剂图案而不去除涂膜。通过使用涂膜作为掩模来处理基板，在基板中形成图案。

Public/Granted literature

US20130217217A1 PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND COATING APPARATUS Public/Granted day:2013-08-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）