Invention Grant
US08865596B2 Methods for forming semiconductor structures using selectively-formed sidewall spacers
有权
使用选择性形成的侧壁间隔物形成半导体结构的方法
- Patent Title: Methods for forming semiconductor structures using selectively-formed sidewall spacers
- Patent Title (中): 使用选择性形成的侧壁间隔物形成半导体结构的方法
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Application No.: US13755807Application Date: 2013-01-31
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Publication No.: US08865596B2Publication Date: 2014-10-21
- Inventor: Frank Scott Johnson
- Applicant: Frank Scott Johnson
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries, Inc.
- Current Assignee: Globalfoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/308 ; H01L29/66 ; H01L21/84
Abstract:
Methods for forming semiconductor structures using selectively-formed sidewall spacers are provided. In one method, a first structure and a second structure is formed. The second structure has a height that is greater than the first structure's height. A first sidewall spacer-forming material is deposited overlying the first structure and the second structure. A second sidewall spacer-forming material is deposited overlying the first sidewall spacer-forming material. A composite spacer is formed about the second structure, the composite spacer comprising the first sidewall spacer-forming material and the second sidewall spacer-forming material. The second sidewall spacer-forming material is removed from the first structure and the first sidewall spacer-forming material is removed from the first structure.
Public/Granted literature
- US20130143409A1 METHODS FOR FORMING SEMICONDUCTOR STRUCTURES USING SELECTIVELY-FORMED SIDEWALL SPACERS Public/Granted day:2013-06-06
Information query
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