Invention Grant
- Patent Title: Methods for preparing a semiconductor wafer with high thermal conductivity
- Patent Title (中): 制备具有高导热性的半导体晶片的方法
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Application No.: US13199587Application Date: 2011-09-02
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Publication No.: US08865601B2Publication Date: 2014-10-21
- Inventor: Michael R. Seacrist
- Applicant: Michael R. Seacrist
- Applicant Address: US MO St. Peters
- Assignee: SunEdison Semiconductor Limited (UEN201334164H)
- Current Assignee: SunEdison Semiconductor Limited (UEN201334164H)
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/306 ; H01L29/36 ; H01L29/02 ; H01L21/02 ; H01L21/225 ; H01L31/0352 ; H01L27/146 ; H01L21/22
Abstract:
This invention generally relates to an epitaxial silicon semiconductor wafer with increased thermal conductivity to transfer heat away from a device layer, while also having resistance to common failure mechanisms, such as latch-up failures and radiation event failures. The semiconductor wafer comprises a lightly-doped device layer, a highly-doped protective layer, and a lightly-doped substrate. The invention is also directed to a process for forming such an epitaxial silicon wafer.
Public/Granted literature
- US20110318912A1 Methods for preparing a semiconductor wafer with high thermal conductivity Public/Granted day:2011-12-29
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